Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers Article

Li, Sheng S, Lin, CY, Bedair, SM et al. (1982). Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers . JOURNAL OF ELECTRONIC MATERIALS, 11(2), 273-287. 10.1007/bf02654672

cited authors

  • Li, Sheng S; Lin, CY; Bedair, SM; Hutchby, JA

authors

publication date

  • March 1, 1982

published in

keywords

  • 40 Engineering
  • 51 Physical Sciences
  • 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

publisher

  • Springer Nature

start page

  • 273

end page

  • 287

volume

  • 11

issue

  • 2