Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
Article
Garcia, JC, Dua, C, Mohammadi, S et al. (1998). Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
. JOURNAL OF ELECTRONIC MATERIALS, 27(5), 442-445. 10.1007/s11664-998-0175-3
Garcia, JC, Dua, C, Mohammadi, S et al. (1998). Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
. JOURNAL OF ELECTRONIC MATERIALS, 27(5), 442-445. 10.1007/s11664-998-0175-3
We report on the complete characterization of a hydride- and hydrogen-free chemical beam epitaxy (CBE) process for the realization of GaAs/GaInP heterojunction bipolar transistors. Alternative group V sources tertiary-butylarsine, tertiarybutylphosphine, and trisdimethylaminoarsenic are used instead of traditionally employed AsH3 and PH3. A very high degree of reproducibility of growth parameters (fluxes, substrate temperature, doping levels) is demonstrated. Total defect densities lower than 10 def/cm2 are routinely obtained. Large-area GaInP/GaAs heterojunction bipolar transistors (HBTs) show a high current gain of 225 for base sheet resistance of 400 ohm/sq. The devices also exhibit excellent high-frequency characteristics. A cut-off frequency of 48 GHz and a maximum oscillation frequency of 60 GHz have been obtained. These results demonstrate the high potential capability of CBE for high-throughput GaInP/GaAs HBT production.