Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates Article

Wang, Kun, Pavlidis, Dimitris, Cao, Jun. (1997). Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates . JOURNAL OF ELECTRONIC MATERIALS, 26(1), 1-6. 10.1007/s11664-997-0123-7

cited authors

  • Wang, Kun; Pavlidis, Dimitris; Cao, Jun

authors

publication date

  • January 1, 1997

published in

keywords

  • 51 Physical Sciences
  • 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

publisher

  • Springer Nature

start page

  • 1

end page

  • 6

volume

  • 26

issue

  • 1