In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring Article

Biethan, JP, Considine, L, Pavlidis, D. (2011). In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring . JOURNAL OF ELECTRONIC MATERIALS, 40(4), 453-458. 10.1007/s11664-011-1515-2

cited authors

  • Biethan, JP; Considine, L; Pavlidis, D

authors

abstract

  • A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation. © 2011 TMS.

publication date

  • April 1, 2011

published in

Digital Object Identifier (DOI)

start page

  • 453

end page

  • 458

volume

  • 40

issue

  • 4