High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs Conference

Kwon, Y, Ng, GI, Pavlidis, D et al. (1992). High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs . 263-266.

cited authors

  • Kwon, Y; Ng, GI; Pavlidis, D; Lai, R; Brock, T; Castagne, J; Linh, NT

abstract

  • The performance of monolithic integrated oscillators using submicron InAlAs/InGaAs HEMTs (high electron mobility transistors) at 35 GHz is presented. Two different types of feedback schemes were employed showing distinct bias tuning features. A large-signal analysis was performed to analyze their power characteristics. The dual feedback oscillator had an output power of 8.2 mW and showed a high DC-to-RF efficiency of 36% at 35.6 GHz.

publication date

  • January 1, 1992

start page

  • 263

end page

  • 266