EFFECT OF CHANNEL STRAIN ON THE ELECTRICAL CHARACTERISTICS OF InGaAs/InAlAs HEMTs.
Conference
Chan, YJ, Pavlidis, D, Ng, GI et al. (1987). EFFECT OF CHANNEL STRAIN ON THE ELECTRICAL CHARACTERISTICS OF InGaAs/InAlAs HEMTs.
. 427-430. 10.1109/iedm.1987.191449
Chan, YJ, Pavlidis, D, Ng, GI et al. (1987). EFFECT OF CHANNEL STRAIN ON THE ELECTRICAL CHARACTERISTICS OF InGaAs/InAlAs HEMTs.
. 427-430. 10.1109/iedm.1987.191449
A tight binding formalism is used in order to model the biaxial compressive strain. The distribution of the charge sheet density in the subbands of the quantum well is evaluated as a function of strain and carrier enhancement is observed primarily in the ground-state subband. Devices were grown by molecular-beam epitaxy using the design procedure. HEMTs (high-electron-mobility transistors) were fabricated using 60% and 65% in composition; the measured intrinsic transconductance increased by 40% (321 mS/mm) and 47% (359 ms/mm) respectively. Capacitance-voltage and temperature characteristics are presented. Microwave results are also reported.
