Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects Article

Samelis, A, Pavlidis, D. (1997). Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 45(4), 534-542. 10.1109/22.566634

cited authors

  • Samelis, A; Pavlidis, D

authors

abstract

  • The large-signal microwave characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) are modeled using the conventional Gummel-Poon-based bipolar junction transistor (BJT) model and extending it to include self-heating effects. The model is incorporated as a user-defined model in a commercial circuit simulator. The experimental microwave characteristics of HBT's are analyzed using the new model and harmonic balance techniques and the impact of self-heating effects on the device large-signal characteristics is investigated. Use of constant base voltage rather than constant current is more suitable for achieving maximum output power. Self-heating induced by RF drive is reduced under constant base current conditions. Increased thermal capacitance values result in gain enhancement at high power levels. © 1997 IEEE.

publication date

  • December 1, 1997

published in

Digital Object Identifier (DOI)

start page

  • 534

end page

  • 542

volume

  • 45

issue

  • 4