Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching Article

Tiginyanu, IM, Ursaki, VV, Zalamai, VV et al. (2003). Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching . APPLIED PHYSICS LETTERS, 83(8), 1551-1553. 10.1063/1.1605231

cited authors

  • Tiginyanu, IM; Ursaki, VV; Zalamai, VV; Langa, S; Hubbard, S; Pavlidis, D; Föll, H

abstract

  • A study was performed on luminescence of GaN nanocolumns, which were obtained by photon-assisted anodic etching. The metalorganic chemical vapor deposition technique was used for the purpose. The photoluminescence spectroscopy characterization revealed that the as-grown bulk GaN layers suffered from compressive biaxial strain of 0.5 GPa.

publication date

  • August 25, 2003

published in

Digital Object Identifier (DOI)

start page

  • 1551

end page

  • 1553

volume

  • 83

issue

  • 8