Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits Article

Kwon, Y, Pavlidis, D. (1991). Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits . MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 4(1), 38-43. 10.1002/mop.4650040112

cited authors

  • Kwon, Y; Pavlidis, D

authors

abstract

  • InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter‐wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum‐confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz. Copyright © 1991 Wiley Periodicals, Inc., A Wiley Company

publication date

  • January 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 38

end page

  • 43

volume

  • 4

issue

  • 1