Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH3 Article

Hong, CH, Pavlidis, D, Hong, K et al. (1995). Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH3 . Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 32(1-2), 69-74. 10.1016/0921-5107(94)01149-4

cited authors

  • Hong, CH; Pavlidis, D; Hong, K; Wang, K

abstract

  • Cubic and hexagonal GaN epitaxial films were grown on GaAs(100) substrates by low pressure metallorganic chemical vapor deposition using NH3 as a nitrogen source. Analysis of X-ray diffraction spectra and transmission electron microscopy measurements show a transformation from (0002) hexagonal or (111) cubic phase to (200) cubic phase GaN as the growth temperature is raised from 530 to 600 °C. The hexagonal phase is found to dominate as the temperature is further increased above 650 °C while the cubic phase dominated in the range of 570-650 °C. Selected-area electron diffraction and electron micro-diffraction tests confirm the results. The full width at half-maximum of the (200) diffraction peak from cubic GaN grown at 600 °C was about 1°, independent of V/III ratio (3000-7500) and for thickness up to 1 μm. © 1995.

authors

publication date

  • January 1, 1995

published in

Digital Object Identifier (DOI)

start page

  • 69

end page

  • 74

volume

  • 32

issue

  • 1-2