Design optimization and characterization of high-gain galnp/gaas hbt distributed amplifiers for high-bit-rate telecommunication Article

Mohammadi, S, Park, JW, Pavlidis, D et al. (2000). Design optimization and characterization of high-gain galnp/gaas hbt distributed amplifiers for high-bit-rate telecommunication . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 48(6), 1030-1037. 10.1109/22.904741

cited authors

  • Mohammadi, S; Park, JW; Pavlidis, D; Guyaux, JL; Garcia, JC

authors

abstract

  • The design methodology, processing technology, and characterization of high-gain GalnP/GaAs heterojunctoin-bipolar-transistor-based distributed amplifiers are described in this paper. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a three-stage attenuation-compensated distributed amplifier with a flat gain (S2i) of 12.7 dB over a bandwidth of 27.5 GHz was successfully fabricated and tested. Eye-diagram tests at 10 Gb/s show very open eye characteristics with no signal skewing. The amplifier achieves a minimum noise figure of 4 dB at 3 GHz and a sensitivity of -25 dBm for 10-Gb/s nonreturn-to-zero 21B -1 pseudorandom bit sequence with a bit error rate of 10~9. Index Terms-Attenuation compensation, bit error rate, distributed amplifiers, HBT. © 2000 IEEE.

publication date

  • December 1, 2000

published in

Digital Object Identifier (DOI)

start page

  • 1030

end page

  • 1037

volume

  • 48

issue

  • 6