Technology aspects of GaN-based diodes for high-field operation Article

Mutamba, K, Yilmazoglu, O, Sydlo, C et al. (2006). Technology aspects of GaN-based diodes for high-field operation . SUPERLATTICES AND MICROSTRUCTURES, 40(4-6 SPEC. ISS.), 363-368. 10.1016/j.spmi.2006.07.026

cited authors

  • Mutamba, K; Yilmazoglu, O; Sydlo, C; Mir, M; Hubbard, S; Zhao, G; Daumiller, I; Pavlidis, D

authors

abstract

  • This work reports important aspects of technology development and characterization for GaN based diodes operating at high electric fields. The considered operation conditions result, in comparison to III-V semiconductor devices, from the higher values of threshold field for intervalley transfer of electrons. This lies above 150 kV/cm and requires correspondingly higher biasing voltages and currents through semiconducting layers of transferred electron devices, switches or NDR (negative differential resistance) diodes. Mesa-based vertical and lateral devices using GaN layers on sapphire substrate were considered for current-voltage characteristics under very high electric field conditions. A systematic investigation of MOCVD-grown diode structures with regular, tapered mesa designs and variable dimensions was carried out under pulsed-bias condition. The current-voltage characteristics showed threshold voltages for saturation corresponding to electric fields well above the critical value of 150 kV/cm in the active layer. Self-heating and electromigration effects have been addressed in relation with biasing and metallization conditions. © 2006 Elsevier Ltd. All rights reserved.

publication date

  • October 1, 2006

published in

Digital Object Identifier (DOI)

start page

  • 363

end page

  • 368

volume

  • 40

issue

  • 4-6 SPEC. ISS.