The first fabrication of n- and p-type Ga0.49In 0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD Article

Razeghi, M, Omnes, F, Defour, M et al. (1990). The first fabrication of n- and p-type Ga0.49In 0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD . 5(3), 274-277. 10.1088/0268-1242/5/3/016

cited authors

  • Razeghi, M; Omnes, F; Defour, M; Maurel, P; Bove, P; Chan, YJ; Pavlidis, D

abstract

  • The authors report the first fabrication of Ga0.49In 0.51P/GaxIn1-xAs n- and p-type lattice matched (x=1) and strained (x-0.85) heterostructure insulated gate field effect transistor (HIGFET) grown by low-pressure metal-organic chemical vapour deposition (LP MOCVD). The growth conditions of Ga0.49In 0.51P have been optimised to produce a high-purity insulator material. The n-type devices show good pinch-off characteristics, with a small variation of threshold voltage with temperature consecutive to the low trap density in that system. High transconductance values have been obtained on p-type devices, due to the large valence band discontinuity between GaAs and Ga0.49In0.51P.

publication date

  • December 1, 1990

Digital Object Identifier (DOI)

start page

  • 274

end page

  • 277

volume

  • 5

issue

  • 3