Optical characterization of AlN/GaN heterostructures Article

Ursaki, VV, Tiginyanu, IM, Zalamai, VV et al. (2003). Optical characterization of AlN/GaN heterostructures . JOURNAL OF APPLIED PHYSICS, 94(8), 4813-4818. 10.1063/1.1609048

cited authors

  • Ursaki, VV; Tiginyanu, IM; Zalamai, VV; Hubbard, SM; Pavlidis, D


  • The AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3-35 nm were characterized by using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. A model of electronic transitions responsible for the emission band involved is also proposed. It was found that the increase of the AlN gate film thickness beyond a critical value lead to a sharp decrease in exciton resonance in PR and PL spectra.

publication date

  • October 15, 2003

published in

Digital Object Identifier (DOI)

start page

  • 4813

end page

  • 4818


  • 94


  • 8