Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p--n- collector structure
Conference
Chau, HF, Pavlidis, D, Ng, GI et al. (1993). Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p--n- collector structure
. 25-28.
Chau, HF, Pavlidis, D, Ng, GI et al. (1993). Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p--n- collector structure
. 25-28.
InP/InGaAs Heterostructure Bipolar Transistors (HBT's) have demonstrated excellent microwave characteristics due to the inherently superior transport properties of InGaAs. However, the low bandgap energy of InGaAs has resulted in a rather low breakdown voltage for InP/InGaAs HBT's compared to AlGaAs/GaAs devices. Although δ-doping techniques have been successfully applied to enhance the breakdown performance of AlGaAs/GaAs system due to the associated high electric fields. Furthermore, the special collector structures known as inverted-field or undoped collector designs seem to be advantageous for speed but have in general low breakdown voltages. In view of this constraint, a novel p--n- collector structure was proposed. Theoretical and experimental breakdown-speed characteristics are presented in this paper, and a speed improvement over the conventional design is shown experimentally.
