The Influence of Device Physical Parameters on HEMT Large Signal Characteristics Article

Weiss, M, Pavlidis, D. (1988). The Influence of Device Physical Parameters on HEMT Large Signal Characteristics . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 36(2), 239-249. 10.1109/22.3511

cited authors

  • Weiss, M; Pavlidis, D

authors

abstract

  • The small and large signal high-frequency characteristics of submicron HEMT’s are analyzed by taking into account parasitic effects such as parallel conduction, fringing capacitances, and substrate leakage. The dependence of large signal properties on device physical parameters is reported. This includes device gate length, donor layer thickness and doping, and spacer thickness. Satisfactory agreement is shown to exist between theoretically and experimentally obtained device characteristics. © 1988 IEEE

publication date

  • January 1, 1988

published in

Digital Object Identifier (DOI)

start page

  • 239

end page

  • 249

volume

  • 36

issue

  • 2