A review of the growth, doping & applications of β-Ga2O3 thin films Conference

Razeghi, M, Park, JH, McClintock, R et al. (2018). A review of the growth, doping & applications of β-Ga2O3 thin films . SMART BIOMEDICAL AND PHYSIOLOGICAL SENSOR TECHNOLOGY XI, 10533 10.1117/12.2302471

cited authors

  • Razeghi, M; Park, JH; McClintock, R; Pavlidis, D; Teherani, FH; Rogers, DJ; Magill, BA; Khodaparast, GA; Xu, Y; Wu, J; Dravid, VP

abstract

  • β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

publication date

  • January 1, 2018

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 13

volume

  • 10533