Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition Article

Hashizume, T, Alekseev, E, Pavlidis, D et al. (2000). Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition . JOURNAL OF APPLIED PHYSICS, 88(4), 1983-1986. 10.1063/1.1303722

cited authors

  • Hashizume, T; Alekseev, E; Pavlidis, D; Boutros, KS; Redwing, J

authors

abstract

  • Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1 × 1011 cm-2eV-1 or less around the energy position of Ec-0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C-V characteristics. © 2000 American Institute of Physics.

publication date

  • August 15, 2000

published in

Digital Object Identifier (DOI)

start page

  • 1983

end page

  • 1986

volume

  • 88

issue

  • 4