Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Article
Hashizume, T, Alekseev, E, Pavlidis, D et al. (2000). Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
. JOURNAL OF APPLIED PHYSICS, 88(4), 1983-1986. 10.1063/1.1303722
Hashizume, T, Alekseev, E, Pavlidis, D et al. (2000). Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
. JOURNAL OF APPLIED PHYSICS, 88(4), 1983-1986. 10.1063/1.1303722