Fmax-enhancement in cbe-grown InAIAs/InGaAs HEMT's using novel self-aligned offset-gate technology
Conference
Kwon, Y, Brock, T, Ng, GI et al. (1992). Fmax-enhancement in cbe-grown InAIAs/InGaAs HEMT's using novel self-aligned offset-gate technology
. 360-363. 10.1109/ICIPRM.1992.235677
Kwon, Y, Brock, T, Ng, GI et al. (1992). Fmax-enhancement in cbe-grown InAIAs/InGaAs HEMT's using novel self-aligned offset-gate technology
. 360-363. 10.1109/ICIPRM.1992.235677
High fmax values are an essential requirement for microwave applications. fmax enhancement to 350 GHz [1] has been reported in AlGaAs/InGaAs HEMT's by offsetting the gate to source. High fmax values of 455 GHz [2] have also been obtained from MBE grown InAIAs/InGaAs HEMT's. Ultimate fmax performance is, however, expected by combining the offset-gate advantages with small gate-source spacing. The latter is possible by a self-aligned gate technology and is the subject of this work, which presents a novel approach with offset self-aligned gates. Furthermore, we applied this technique to InAIAs/InGaAs HEMT's grown by Chemical Beam Epitaxy (CBE) rather than MBE. A first demonstration of the feasibility of CBE growth for HEMT's has recently been reported by the authors [3].
