Enhanced annealing kinetics in ion-implanted InxAl 1-xAs studied by x-ray diffractometry Article

Clarke, R, Dos Passos, W, Chan, YJ et al. (1991). Enhanced annealing kinetics in ion-implanted InxAl 1-xAs studied by x-ray diffractometry . APPLIED PHYSICS LETTERS, 58(20), 2267-2269. 10.1063/1.104895

cited authors

  • Clarke, R; Dos Passos, W; Chan, YJ; Pavlidis, D

abstract

  • We report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si-implanted InxAl1-xAs (x≊0.54) layers on (100)InP. Under these annealing conditions (750°C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellösung fringes in double-crystal x-ray diffraction. Measurements of the parallel (ε∥) and perpendicular (ε⊥) lattice mismatch show a slight relaxation in ε⊥ during RTA without significant generation of dislocations (ε∥=0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples.

publication date

  • December 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 2267

end page

  • 2269

volume

  • 58

issue

  • 20