InAIAs/InGaAs HEMT's have primarily used MBE grown heterostructures. MOVPE offers, however, an attractive alternative due to its better compatibility with optoelectonic requirements. Phosphorus containing compounds can for example be grown by MOVPE, high growth rates can be achieved and the technique lends itself better for production. This paper reports for the first time on the above 150GHz operation capability of MOVPE grown InAIAs/InGaAs HEMT's using 0.1μm T-gate technology.
