GaAs Monolithic Integrated Optical Preamplifier Article

Archambault, Y, Pavlidis, D, Guet, JP. (1987). GaAs Monolithic Integrated Optical Preamplifier . JOURNAL OF LIGHTWAVE TECHNOLOGY, 5(3), 355-366. 10.1109/JLT.1987.1075520

cited authors

  • Archambault, Y; Pavlidis, D; Guet, JP

authors

abstract

  • A GaAs monolithic integrated optical preamplifier has been developed based on the transimpedance principle. By associating the amplifier with an external p-i-n diode, a sensitivity of —38 dBm was measured at 140 Mbits/s and 10–9 error rate with a signal wavelength of 1.3 pm. A TiWSiN-integrated technology was used to realize larger than 100-kΩ feedback resistors and gate leakage could be minimized by improving Schottky contact deposition and employing selective implantation. The optimization details of the FET and resistor elements, as well as the design techniques for integrated transimpedance amplifiers are presented. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.

publication date

  • January 1, 1987

published in

Digital Object Identifier (DOI)

start page

  • 355

end page

  • 366

volume

  • 5

issue

  • 3