Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy Article

Stolz, A, Cho, E, Dogheche, E et al. (2011). Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy . APPLIED PHYSICS LETTERS, 98(16), 10.1063/1.3582055

cited authors

  • Stolz, A; Cho, E; Dogheche, E; Androussi, Y; Troadec, D; Pavlidis, D; Decoster, D

abstract

  • The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55 μm, corresponding to the best value reported so far for a GaN-based waveguide. © 2011 American Institute of Physics.

publication date

  • April 18, 2011

published in

Digital Object Identifier (DOI)

volume

  • 98

issue

  • 16