A Study and Optoelectronic Verification of AlGaAs/ GaAs Heterojunction Bipolar Transistor Large-Signal Characteristics Article

Frankel, MY, Pavlidis, D, Mourou, GA. (1993). A Study and Optoelectronic Verification of AlGaAs/ GaAs Heterojunction Bipolar Transistor Large-Signal Characteristics . IEEE Journal of Quantum Electronics, 29(11), 2799-2804. 10.1109/3.248939

cited authors

  • Frankel, MY; Pavlidis, D; Mourou, GA

abstract

  • A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandwidth electrooptic transducer gated by 100-fs laser pulses to interrogate the time-domain waveforms at the device input and output nodes. A microwave signal phase-locked to the laser pulse-train is used to synchronously excite the device in both small-signal and large-signal regimes. The measurement system is capable of 50-GHz bandwidth and provides time-domain voltage waveforms that can be used directly to verify the time-domain results of the large-signal analysis. © 1993 IEEE

authors

publication date

  • January 1, 1993

published in

Digital Object Identifier (DOI)

start page

  • 2799

end page

  • 2804

volume

  • 29

issue

  • 11