TOLERANCED EQUIVALENT CIRCUIT ELEMENTS AS A FUNCTION OF GATE AND DRAIN VOLTAGES FOR MMIC GAAS FETS AND TEGFETS. Conference

Montoriol, G, Le Brun, M, Parisot, M et al. (1985). TOLERANCED EQUIVALENT CIRCUIT ELEMENTS AS A FUNCTION OF GATE AND DRAIN VOLTAGES FOR MMIC GAAS FETS AND TEGFETS. . 1025-1030.

cited authors

  • Montoriol, G; Le Brun, M; Parisot, M; Pavlidis, D; Rumelhard, C; Sentubery, C

authors

abstract

  • MESFET and TEGFET equivalent circuit models are given as a function of drain and gate bias voltages. The models are prepared to include the dispersions on the characteristics of one wafer or from wafer to wafer. Two GaAs MESFETs having 1 mu m and 0. 5 mu m gatelengths and an 0. 5 mu m TEGFET are treated. An example is given for a full amplifier study.

publication date

  • December 1, 1985

start page

  • 1025

end page

  • 1030