X-band varactor tuned monolithic GaAs FET oscillators† Article

Pataut, G, Pavlidis, D. (1988). X-band varactor tuned monolithic GaAs FET oscillators† . International Journal of Electronics, 64(5), 731-751. 10.1080/00207218808962847

cited authors

  • Pataut, G; Pavlidis, D

abstract

  • The design, fabrication and performance of X-band varactor-tuned monolithic GaAs FET oscillators is described. The design is based on small and large signal device characteristics. A manufacturable process is used in order to realize the oscillators. The experimental performance agrees with the theoretical expectations within 0·2% for the oscillation frequency and 4% for the tuning bandwidth. Best tuning bandwidth and output power values exceeded 2 GHz and 28 mW. Wafer dispersion depends on oscillator characteristics and varies between ±1% and ±7·7% for oscillators with a varactor in the FET source. The rf wafer yield is 65%. Finally, noise and temperature characteristics are given. © 1988, Taylor & Francis Group, LLC.

authors

publication date

  • January 1, 1988

published in

Digital Object Identifier (DOI)

start page

  • 731

end page

  • 751

volume

  • 64

issue

  • 5