New generation MMIC amplifier using InGaAs/InAlAs HEMTs Article

Weiss, M, Ng, GI, Pavlidis, D. (1990). New generation MMIC amplifier using InGaAs/InAlAs HEMTs . ELECTRONICS LETTERS, 26(4), 264-266. 10.1049/el:19900176

cited authors

  • Weiss, M; Ng, GI; Pavlidis, D

authors

abstract

  • An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4dB at 6.4GHz and exceeds 15dB from 6.0 to 9.5GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.

publication date

  • January 1, 1990

published in

Digital Object Identifier (DOI)

start page

  • 264

end page

  • 266

volume

  • 26

issue

  • 4