DC and high-frequency characteristics of GaN schottky varactors for frequency multiplication Conference

Jin, C, Pavlidis, D, Considine, L. (2012). DC and high-frequency characteristics of GaN schottky varactors for frequency multiplication . E95-C(8), 1348-1353. 10.1587/transele.E95.C.1348

cited authors

  • Jin, C; Pavlidis, D; Considine, L

authors

abstract

  • The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 μm diameter diodes showed a turn-on voltage of 0.5V, a breakdown voltage of 21V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling. Copyright © 2012 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2012

Digital Object Identifier (DOI)

start page

  • 1348

end page

  • 1353

volume

  • E95-C

issue

  • 8