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A novel GaN-based high frequency varactor diode
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Jin, C, Pavlidis, D, Considine, L. (2010). A novel GaN-based high frequency varactor diode .
118-121.
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Jin, C, Pavlidis, D, Considine, L. (2010). A novel GaN-based high frequency varactor diode .
118-121.
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cited authors
Jin, C; Pavlidis, D; Considine, L
authors
Pavlidis, Dimitrios
abstract
GaN Schottky Varactor diodes with potential applications in high frequency multipliers and circuit tuning were designed, fabricated and characterized. The turn-on voltage of the diodes is ∼0.5V, while a modulation ratio of ∼1.5 was achieved. Equivalent circuit model extraction using measured S-parameters, confirmed the low-frequency extracted data and showed a weak bias dependent series resistance. Diodes with a thickness of 0.3 μm and a diameter of 4 μm had a breakdown voltage of 20 V and a cut-off frequency of 360 GHz. © 2010 EuMA.
publication date
December 6, 2010
Additional Document Info
start page
118
end page
121