A novel GaN-based high frequency varactor diode Conference

Jin, C, Pavlidis, D, Considine, L. (2010). A novel GaN-based high frequency varactor diode . 118-121.

cited authors

  • Jin, C; Pavlidis, D; Considine, L

authors

abstract

  • GaN Schottky Varactor diodes with potential applications in high frequency multipliers and circuit tuning were designed, fabricated and characterized. The turn-on voltage of the diodes is ∼0.5V, while a modulation ratio of ∼1.5 was achieved. Equivalent circuit model extraction using measured S-parameters, confirmed the low-frequency extracted data and showed a weak bias dependent series resistance. Diodes with a thickness of 0.3 μm and a diameter of 4 μm had a breakdown voltage of 20 V and a cut-off frequency of 360 GHz. © 2010 EuMA.

publication date

  • December 6, 2010

International Standard Book Number (ISBN) 13

start page

  • 118

end page

  • 121