A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs
Conference
Kwon, Y, Pavlidis, D, Marsh, P et al. (1992). A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs
. 51-54. 10.1109/GAAS.1992.247225
Kwon, Y, Pavlidis, D, Marsh, P et al. (1992). A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs
. 51-54. 10.1109/GAAS.1992.247225
The experimental characteristics of a monolithic D-band oscillator-doubler chain are reported together with the design, monolithic integrated circuit (MMIC) implementation, and testing. The circuits were fabricated using submicron (0.1μm) InAlAs/InGaAs HEMT's and had on-chip bias stabilization circuitry and an integrated E-field probe for direct radiation into the waveguide. The oscillation signal was detected over a frequency range of 130.3 GHz to 132.8 GHz with an output power of -12 dB m for designs with small gate periphery (45μm) HEMT's. This is the first report of the monolithic oscillator-doubler chain at D-band using In P-based HEMT's.
