Hot-phonon limited electron energy relaxation in AlN/GaN
Conference
Matulionis, A, Liberis, J, Ardaravičius, L et al. (2002). Hot-phonon limited electron energy relaxation in AlN/GaN
. 12(2), 459-468. 10.1142/S0129156402001381
Matulionis, A, Liberis, J, Ardaravičius, L et al. (2002). Hot-phonon limited electron energy relaxation in AlN/GaN
. 12(2), 459-468. 10.1142/S0129156402001381
Microwave noise technique is applied to study energy dissipation in an AlN/GaN heterostructure containing a two-dimensional electron gas channel. Measurements of the dissipated power and the noise temperature are performed at 80 K lattice temperature in the electric field range up to 40 kV/cm. The energy relaxation time is found to decrease from 40 ps to 0.55 ps when the bias is increased. The experimental data are discussed in the electron temperature approximation assuming electron energy dissipation on optical phonons and hot-phonon effects. Dependencies of the hot-phonon number and the hot-phonon temperature on the hot-electron temperature are deduced. The frequency cutoff imposed by the limited energy dissipation through optical phonons is estimated.
