Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates Article

Cao, J, Pavlidis, D, Eisenbach, A et al. (1997). Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates . APPLIED PHYSICS LETTERS, 71(26), 3880-3882. 10.1063/1.120532

cited authors

  • Cao, J; Pavlidis, D; Eisenbach, A; Philippe, A; Bru-Chevallier, C; Guillot, G

authors

abstract

  • A compliant substrate approach has been employed to release lattice-mismatch caused strain in GaN epilayers through stress absorption in the substrate. GaN layers have been grown on silicon-on-insulator (SOI) substrates by low-pressure metalorganic chemical vapor deposition Photoluminescence measurements at 4 K show the spectrum of grown GaN being dominated by UV emission around 3.47 eV related to neutral-donor bound excitons. The much weaker yellow luminescence shows a broad spectrum around 2.16 eV. Peak position of the UV emission changes both with measurement temperature and strain. At room temperature, the UV peak is red shifted by 64 meV corresponding well to the band-gap temperature dependence. Strain-induced blue shitt of the peak, compared to unstrained GaN, is much less than for growth on sapphire, indicating strain relief in the GaN by growth on SOI. Further reduction of the blue shift is consistent with increased electron mobility. © 1997 American Institute of Physics.

publication date

  • December 29, 1997

published in

Digital Object Identifier (DOI)

start page

  • 3880

end page

  • 3882

volume

  • 71

issue

  • 26