Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy Conference

Bru-Chevallier, C, Baltagi, Y, Guillot, G et al. (1997). Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy . 57-60. 10.1109/ISCS.1998.711547

cited authors

  • Bru-Chevallier, C; Baltagi, Y; Guillot, G; Hong, K; Pavlidis, D

authors

abstract

  • The interface quality of InAs/InGaAs heterostructures used in High-Electron-Mobility-Transistors (HEMTs) is evaluated as a function of growth interruption time, using photoreflectance spectroscopy on 250 a InGaAs single quantum wells between InAlAs layers. Assessment of the interface roughness is derived from the broadening of the high order quantum confined transitions. The higher the growth interruption time, the smaller the interface roughness as derived from PR measurements. The results are in good agreement with higher electron mobility values measured by Hall effect.

publication date

  • January 1, 1997

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 57

end page

  • 60