Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors
Conference
Hu, J, Chau, HF, Pavlidis, D et al. (1992). Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors
. 104-113.
Hu, J, Chau, HF, Pavlidis, D et al. (1992). Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors
. 104-113.
Theoretical and experimental investigations using InP/GaAs heterojunction bipolar transistors (HBTs) with and without undoped collectors are reported. A steady-state and transient Monte Carlo technique was used to evaluate each design. The switching and steady-state performance of the undoped collector HBT is faster (1.33 ps vs. 2.10 ps switching, and 1.35 ps vs. 2.64 ps steady-state performance) at a given collector current density. A self-aligned HBT process using reactive ion etching (RIE) for reaching the base is described. Conventional and undoped collector devices had hfe gains on the order of 63 and maximum cutoff frequency of 18 GHz using a 2 μm × 11 μm emitter geometry.
