Analysis of the large-signal characteristics of InP/ InGaAs-based optoelectronic preamplifiers Article

Samelis, A, Pavlidis, D, Chandrasekhar, S et al. (1996). Analysis of the large-signal characteristics of InP/ InGaAs-based optoelectronic preamplifiers . MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 11(3), 163-168. 10.1002/(sici)1098-2760(19960220)11:3<163::aid-mop14>3.0.co;2-c

cited authors

  • Samelis, A; Pavlidis, D; Chandrasekhar, S; Lunardi, LM

authors

abstract

  • A model for soft breakdown effects in InP/InGaAs-based single HBTs is developed. The effects of large-signal excitation on the operational characteristics of optoelectronic preamplifiers, such as the transducer and transimpedance gain of individual transistors, are addressed. These effects depend on optoelectronic integrated-circuit (OEIC) design and are associated with self-bias variations due to input power levels. Cascode designs are relatively immune to these effects, whereas basic coupled amplifiers are more sensitive (9-dB Ω vs. 3-dB Ω transimpedance reduction) for the same input power increase from -35 to -5 dBm. © 1996 John Wiley & Sons, Inc.

publication date

  • February 20, 1996

published in

start page

  • 163

end page

  • 168

volume

  • 11

issue

  • 3