Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs Article

Hong, CH, Pavlidis, D, Brown, SW et al. (1995). Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs . JOURNAL OF APPLIED PHYSICS, 77(4), 1705-1709. 10.1063/1.358862

cited authors

  • Hong, CH; Pavlidis, D; Brown, SW; Rand, SC

authors

abstract

  • GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.

publication date

  • December 1, 1995

published in

Digital Object Identifier (DOI)

start page

  • 1705

end page

  • 1709

volume

  • 77

issue

  • 4