Quantum state transfer in double-quantum-well devices Article

Jakumeit, J, Tutt, M, Pavlidis, D. (1994). Quantum state transfer in double-quantum-well devices . JOURNAL OF APPLIED PHYSICS, 76(11), 7428-7436. 10.1063/1.357969

cited authors

  • Jakumeit, J; Tutt, M; Pavlidis, D

authors

abstract

  • A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz. © 1994 American Institute of Physics.

publication date

  • December 1, 1994

published in

Digital Object Identifier (DOI)

start page

  • 7428

end page

  • 7436

volume

  • 76

issue

  • 11