Field emission from quantum size GaN structures Article

Yilmazoglu, O, Pavlidis, D, Litvin, YM et al. (2003). Field emission from quantum size GaN structures . APPLIED SURFACE SCIENCE, 220(1-4), 46-50. 10.1016/S0169-4332(03)00750-5

cited authors

  • Yilmazoglu, O; Pavlidis, D; Litvin, YM; Hubbard, S; Tiginyanu, IM; Mutamba, K; Hartnagel, HL; Litovchenko, VG; Evtukh, A


  • A method of using GaN as low electron affinity material modified by photoelectrochemical (PEC) or anodic etching to achieve field enhancement structures and quantum size tips was presented. The latter caused the splitting of electron energy-levels. It was suggested that the decreased effective work function and hence the turn-on voltage is the result of these two factors.

publication date

  • December 30, 2003

published in

Digital Object Identifier (DOI)

start page

  • 46

end page

  • 50


  • 220


  • 1-4