Improvement of CO sensitivity in GaN-based gas sensors Conference

Cho, E, Pavlidis, D, Zhao, G et al. (2006). Improvement of CO sensitivity in GaN-based gas sensors . E89-C(7), 1047-1051. 10.1093/ietele/e89-c.7.1047

cited authors

  • Cho, E; Pavlidis, D; Zhao, G; Hubbard, SM; Schwank, J

authors

abstract

  • Pt Schottky diode gas sensors for carbon monoxide (CO) were fabricated using slightly Si doped bulk GaN grown on sapphire substrate. The influence of diode size, Pt thickness, operating temperature on gas sensitivity was investigated. CO sensitivity was improved six times by optimizing the size and thickness of the Pt contact. Surface restructuring and morphology changes of Pt film were observed after thermal annealing. These changes are enhanced as the film thickness is reduced further and contribute to improve CO sensitivity. Copyright © 2006 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2006

Digital Object Identifier (DOI)

start page

  • 1047

end page

  • 1051

volume

  • E89-C

issue

  • 7