Submicron pseudomorphic double heterojunction InAlAs/In0.7Ga0. 3As/InAkAs HEMT's with high cut-off and current-drive capability
Conference
Kwon, Y, Pavlidis, D, Brock, T et al. (1993). Submicron pseudomorphic double heterojunction InAlAs/In0.7Ga0. 3As/InAkAs HEMT's with high cut-off and current-drive capability
. 465-468.
Kwon, Y, Pavlidis, D, Brock, T et al. (1993). Submicron pseudomorphic double heterojunction InAlAs/In0.7Ga0. 3As/InAkAs HEMT's with high cut-off and current-drive capability
. 465-468.
Lattice-matched and strained (pseudomorphic) InAlAs/InGaAs HEMT's are recognized as the most suitable components for operation at millimeter-waves. Both types of devices have shown excellent high-frequency performance. Pseudomorphic InAlAs/InxGa1-x As HEMT's are particularly promising candidates for high-frequency and low-noise applications due to the superior material properties of the strained InGaAs channel. The InGaAs channel with excess Indium provides improved low-field mobility characteristics, better carrier confinement and higher peak velocity due to the larger Γ-to-L valley separation, compared with lattice-matched channels. This paper addresses such pseudomorphic designs using double heterostructure (DH) HEMT designs.
