GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
Conference
Park, JW, Mohammadi, S, Pavlidis, D et al. (1998). GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
. 179-182.
Park, JW, Mohammadi, S, Pavlidis, D et al. (1998). GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
. 179-182.
Monolithic broadband transimpedance amplifiers were developed using GaInP/GaAs single HBTs. The HBTs showed a cut off frequency (fT) of 60 GHz and maximum oscillation frequency (fmax) of 100 GHz. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dBΩ. The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.