DC to high-frequency hbt-model parameter evaluation using impedance block conditioned optimization Article

Samelis, A, Pavlidis, D. (1997). DC to high-frequency hbt-model parameter evaluation using impedance block conditioned optimization . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 45(6), 886-897. 10.1109/22.588596

cited authors

  • Samelis, A; Pavlidis, D

authors

abstract

  • A new heterojunction bipolar transistor (HBT) small-signal equivalent-circuit parameter-extraction procedure employing multibias S-parameter data is presented. The algorithm combines analytical and empirical parameter evaluation techniques and results in a bias-dependent HBT model. To minimize the risk of nonphysical parameter estimation, elements such as the dc transport factor, a0, and the emitter-base conductance are evaluated from the device dc characteristics, and the frequency dispersion of a is related to the RC time-constant of the emitter-base junction. Moreover, initial values for the extrinsic device parasitics are obtained from "hot" as well as "cold" S-parameter data. The method results in excellent fit between measured and modeled S-parameter data in the frequency range dc-40 GHz and for a wide range of bias operating points. © 1997 IEEE.

publication date

  • December 1, 1997

published in

Digital Object Identifier (DOI)

start page

  • 886

end page

  • 897

volume

  • 45

issue

  • 6