Low interface state density AlN/GaN MISFETs
Article
Alekseev, E, Eisenbach, A, Pavlidis, D. (1999). Low interface state density AlN/GaN MISFETs
. ELECTRONICS LETTERS, 35(24), 2145-2146. 10.1049/el:19991407
Alekseev, E, Eisenbach, A, Pavlidis, D. (1999). Low interface state density AlN/GaN MISFETs
. ELECTRONICS LETTERS, 35(24), 2145-2146. 10.1049/el:19991407
AlN/GaN heterostructures using thin epitaxially grown AlN barrier layers have been investigated for the purpose of developing III-V-based metal insulator semiconductor field effect transistors (MISFET). Current-voltage characterization and Terman's method were used to demonstrate a low interface state density of the AlN/GaN interface. The high quality of the interface is confirmed by very high values of transconductance and current density obtained from HFETs fabricated on the AlN/GaN layers. The results indicate a high potential of AlN/GaN MISFETs for microwave power applications.
