Low interface state density AlN/GaN MISFETs Article

Alekseev, E, Eisenbach, A, Pavlidis, D. (1999). Low interface state density AlN/GaN MISFETs . ELECTRONICS LETTERS, 35(24), 2145-2146. 10.1049/el:19991407

cited authors

  • Alekseev, E; Eisenbach, A; Pavlidis, D


  • AlN/GaN heterostructures using thin epitaxially grown AlN barrier layers have been investigated for the purpose of developing III-V-based metal insulator semiconductor field effect transistors (MISFET). Current-voltage characterization and Terman's method were used to demonstrate a low interface state density of the AlN/GaN interface. The high quality of the interface is confirmed by very high values of transconductance and current density obtained from HFETs fabricated on the AlN/GaN layers. The results indicate a high potential of AlN/GaN MISFETs for microwave power applications.

publication date

  • November 25, 1999

published in

Digital Object Identifier (DOI)

start page

  • 2145

end page

  • 2146


  • 35


  • 24