New pseudomorphic In0.2Ga0.8As HEMT using Al0.52In0. 48P as barrier layer Conference

Ng, GI, Chan, YJ, Pavlidis, D et al. (1993). New pseudomorphic In0.2Ga0.8As HEMT using Al0.52In0. 48P as barrier layer . 505-508.

cited authors

  • Ng, GI; Chan, YJ; Pavlidis, D; Kwon, Y; Brock, T; Kuo, JM

authors

abstract

  • The work reported in this paper examines another alternative offered by Al0.52In0.48P/InyGa1-yAs. This new pseudomorphic HEMT design offers: (i) a larger ΔEc(0.45eV) than pseudomorphic Al0.22Ga0.78As/InyGa1-yAs(0.36eV) with the same channel (y=0.2) composition and thus better confinement, (ii) reduction of DX-center related problems and (iii) high etching selectivity between GAAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. This paper presents for the first time the DC and microwave characteristics of submicron(0.1μm) gate-length Al0.52In0. 48P/In0.2Ga0.8As HEMT's grown by Gas Source Molecular-Beam Epitaxy (GSMBE).

publication date

  • January 1, 1993

International Standard Book Number (ISBN) 10

start page

  • 505

end page

  • 508