Power performance of InP-based single and double heterojunction bipolar transistors
Article
Sawdai, D, Yang, K, Hsu, SSH et al. (1999). Power performance of InP-based single and double heterojunction bipolar transistors
. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 47(8), 1449-1456. 10.1109/22.780393
Sawdai, D, Yang, K, Hsu, SSH et al. (1999). Power performance of InP-based single and double heterojunction bipolar transistors
. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 47(8), 1449-1456. 10.1109/22.780393
The microwave and power performance of fabricated InF-based single and double heterojunction bipolar transistors (HBT's) is presented. The single heterojunction bipolar transistors (SHBT's), which had a 5000-angstroms InGaAs collector, had BVCE0 of 7.2 V and JC max of 2×105 A/cm2. The resulting HBT's with 2×10 μm2 emitters produced up to 1.1 mW/μm2 at 8 GHz with efficiencies over 30%. Double heterojunction bipolar transistors (DHBT's) with a 3000-angstroms InP collector had a BVCE0 of 9 V and JC max of 1.1×105 A/cm2, resulting in power densities up to 1.9 mW/μm2 at 8 GHz and a peak efficiency of 46%. Similar DHBT's with a 6000-angstroms InP collector had a higher BVCE0 of 18 V, but the JC max decreased to 0.4×105 A/cm2 due to current blocking at the base-collector junction. Although the 6000-angstroms InP collector provided higher fmax and gain than the 3000-angstroms collector, the lower JC max reduced its maximum power density below that of the SHBT wafer. The impact on power performance of various device characteristics, such as knee voltage, breakdown voltage, and maximum current density, are analyzed and discussed.
