Technology of wide-bandgap diode structures for highfrequency operation Conference

Mutamba, K, Yilmazoglu, O, Cojocari, O et al. (2006). Technology of wide-bandgap diode structures for highfrequency operation . 1 85-92. 10.1109/SMICND.2006.283938

cited authors

  • Mutamba, K; Yilmazoglu, O; Cojocari, O; Sydlo, C; Pavlidis, D; Hartnagel, HL

authors

abstract

  • This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high electric-fields as well as heterostructure varactors (HBV) and Schottky diodes for frequency multiplication function. The impact of factors such as high threshold voltage for transferred electron effects, strong piezoelectric effects and Schottky barrier properties on device technologies and performances are addressed. © 2006 IEEE.

publication date

  • January 1, 2006

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 85

end page

  • 92

volume

  • 1