Low-frequency noise characterization of high- A nd low-reliability AlGaAs/GaAs single HBTs Conference

Mohammadi, S, Pavlidis, D, Bayraktaroglu, B. (1997). Low-frequency noise characterization of high- A nd low-reliability AlGaAs/GaAs single HBTs . 447-450. 10.1109/ISCS.1998.711691

cited authors

  • Mohammadi, S; Pavlidis, D; Bayraktaroglu, B

authors

abstract

  • Self-aligned AlGaAs/GaAs Single HBTs were fabricated using different epilayers with identical layer structure and processing technology. These HBTs manifested different long-term reliability characteristics despite their identical device design and similar DC characteristics. The low-frequency noise characterization of these devices revealed generation-recombination centers with activation energies from 120 meV to 200 meV. The base-emitter region 1/f noise of these devices was found to be in correlation with the long-term reliability.

publication date

  • January 1, 1997

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 447

end page

  • 450