Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors Article

Dehé, A, Hartnagel, HL, Pavlidis, D et al. (1996). Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors . APPLIED PHYSICS LETTERS, 69(20), 3039-3041. 10.1063/1.116832

cited authors

  • Dehé, A; Hartnagel, HL; Pavlidis, D; Hong, K; Kuphal, E

authors

abstract

  • We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4 × 108 cm Hz-1/2/W are expected for infrared sensors. © 1996 American Institute of Physics.

publication date

  • November 11, 1996

published in

Digital Object Identifier (DOI)

start page

  • 3039

end page

  • 3041

volume

  • 69

issue

  • 20