The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures Article

Choy, WCH, Hughes, PJ, Weiss, BL et al. (1998). The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures . Applied Physics Letters, 72(3), 338-340. 10.1063/1.120729

cited authors

  • Choy, WCH; Hughes, PJ; Weiss, BL; Li, EH; Hong, K; Pavlidis, D

abstract

  • The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.

authors

publication date

  • December 1, 1998

published in

Digital Object Identifier (DOI)

start page

  • 338

end page

  • 340

volume

  • 72

issue

  • 3