Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
Article
Cao, J, Pavlidis, D, Park, Y et al. (1998). Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
. JOURNAL OF APPLIED PHYSICS, 83(7), 3829-3834. 10.1063/1.366613
Cao, J, Pavlidis, D, Park, Y et al. (1998). Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
. JOURNAL OF APPLIED PHYSICS, 83(7), 3829-3834. 10.1063/1.366613